Samsung Electronics Co., Ltd, a global leader in advanced semiconductor technology solutions, announced today that it completed development of the industry's first DDR4 DRAM module in January 2011, using 30 nanometer (nm) class* process technology.
DDR4 is the fourth generation of Double Data Rate memory; however DDR4 is still in the development phase. The anticipated release dates for DDR4 modules continues to change with each news up-date, but appears to be around 2012 or later. However in 2011 Samsung reported fabricating DDR4 RAM modules in but gave no indication when they might be released. I've also seen reports that indicate DDR4 will not be released for production until 2015. The initial DDR4 speed grade was reported to be 1.6GHz, but now the numbers are twice that at 2.133Gbps. As of 2011 there are no PCs that offer DDR4 DIMMs, the faster PCs still come with DDR3 memory.
DDR4 Transfer Rate
The initial 1.6GHz DDR4 speed grade is identical to the highest DDR3 speed range.
These are the planed data rates; 1.6GHz (2011), 2.0GHz (2011), 2.4GHz (2012), 3.2GHz (2013)
Samsung's famed lead in component manufacturing is being extended with the announcement of a DDR4 DRAM stick that can perform read and write operations using up to 40 percent less power than the current DDR3 stuff. Bandwidth maxes out at 2.13Gbps at 1.2V, while Pseudo Open Drain technology assists in minimizing the battery impact. Over time, Samsung projects the new DRAM modules will hit 4Gbps speeds. It's working away with server makers right now in order to achieve JEDEC certification, but the target market will clearly be laptops and other mobile devices, where energy-frugal memory like this would best be appreciated.
"Samsung has been actively supporting the IT industry with our green memory initiative by coming up with eco-friendly, innovative memory products providing higher performance and power efficiency every year," said Dong Soo Jun, president, memory division, Samsung Electronics. "The new DDR4 DRAM will build even greater confidence in our cutting-edge green memory, particularly when we introduce four-gigabit (Gb) DDR4-based products using next generation process technology for mainstream application."
The new DDR4 DRAM module can achieve data transfer rates of 2.133 gigabits per second (Gbps) at 1.2V, compared to 1.35V and 1.5V DDR3 DRAM at an equivalent 30nm-class* process technology, with speeds of up to 1.6Gbps. When applied to a notebook, it reduces power consumption by 40 percent compared to a 1.5V DDR3 module.
The module makes use of Pseudo Open Drain (POD), a new technology that has been adapted to high-performance graphic DRAM to allow DDR4 DRAM to consume just half the electric current of DDR3 when reading and writing data.By employing new circuit architecture, Samsung's DDR4 will be able to run from 1.6 up to 3.2Gbps, compared to today's typical speeds of 1.6Gbps for DDR3 and 800Mbps for DDR2.Late last month, Samsung provided 1.2V 2 gigabyte (2GB) DDR4 unbuffered dual in-line memory modules (UDIMM) to a controller maker for testing.Samsung now plans to work closely with a number of server makers to help insure completion of JEDEC standardization of DDR4 technologies in the second half of this year.
Samsung has been leading the advancement of DRAM technology ever since it developed the industry's first DDR DRAM in 1997. In 2001, it introduced the first DDR2 DRAM, and in 2005, announced the first DDR3 DRAM using 80nm-class technology.
